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李明倫


姓    名 李 明倫 職    稱 教授
校 內 分 機   ( 06 )-2533131 # 3630
E - mail   minglun@stust.edu.tw
最 高 學 歷   成功大學 / 電機博士
研 究 領 域  半導體製程技術、光電元件、光電半導體材料

經歷
服務機關
職稱
起迄年月
 南台科技大學
教授
現職 

獲獎榮譽
 1. 老師資料未更新

期刊論文
2012 63. Shu-Yen Liu, J. K. Sheu*, M. L. Lee, Yu-Chuan Lin, S. J. Tu,1 F. W. Huang, and W. C. Lai, ”Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation”, Optics Express Vol. 20, Iss. S2, pp. A190–A196  (2012)
 2012 62. Y.C. Yang, Jinn-Kong Sheu*, Ming-Lun Lee, Shang-Ju Tu, Feng-Wen Huang, Wei-Chih Lai, Schang Jing Hon, and Tsun Kai Ko, “Vertical InGaN light-emitting diodes with a sapphire-face-up structure”, Optics Express Vol. 20, Iss. 1, 119-124 (2012)
 2011 61. Liang-Jyi Yan, Cheng Huang Kuo, Jinn-Kong Sheu*, Ming-Lun Lee, Wei-Chun Tseng, “Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN“ Journal of Alloys and Compounds, Vol.516, pp.38-40 (2011)
 2011 60. Feng-Wen Huang, Jinn-Kong Sheu*, Ming-Lun Lee, Shang-Ju Tu, Wei-Chih Lai, Wen-Che Tsai , and Wen-Hao Chang,” Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection”, Optics Express Vol. 19, Iss. S6, A1211-1218 (2011)
 2011 59. Shu-Yen Liu, Yu-Chuan Lin, Jhao-Cheng Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai and J. K. Sheu*,” Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts” Optics Express Vol. 19, Iss. S6, A1196-1201 (2011)
 2011 57. J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, and G. C. Chi,” Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers” IEEE ELECTRON DEVICE LETTERS, VOL. 32, NO. 10, pp.1400-1401 (2011)
 2011 56. C. H. Jang, J. K. Sheu*, S. J. Chang, M. L. Lee, C. C. Yang, S. J. Tu, F. W. Huang, and C. K. Hsu,” Effect of Growth Pressure of Undoped GaN Layer on the ESD Characteristics of GaN-Based LEDs Grown on Patterned Sapphire” IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 23, NO. 14, JULY 15, pp.968-970,2011 (2011)
 2011 55. Chih-Ciao Yang, C. H. Jang, Jinn-Kong Sheu* ,Ming-Lun Lee, Shang-Ju Tu, Feng-Wen Huang, Yu-Hsiang Yeh and Wei-Chih Lai, “Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration” Optics Express, Vol. 19, Issue S4, pp. A695-A700 (2011)
 2011 54. Ming-Lun Lee*, T. S. Mue, F.W. Huang, J. H. Yang, and J. K. Sheu,” High-performance GaN metal–insulator–semiconductor ultraviolet photodetectors using gallium oxide as gate layer” Optics Express Vol. 19, Iss. 13, pp. 12658–12663 (2011)
 2011 53. Shang-Ju Tu, Jinn-Kong Sheu*, Ming-Lun Lee, Chih-Ciao Yang, Kuo-Hua Chang, Yu-Hsiang Yeh, Feng-Wen Huang, and Wei-Chih Lai,” Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells” Optics Express Vol. 19, Iss. 13, pp. 12719–12726 (2011)
 2011 52. Che-Kang Hsu; Jinn-Kong Sheu; Jia-Kuen Wang; Ming-Lun Lee; Kuo-Hua Chang; Shang-Ju Tu; Wei-Chih Lai” Characteristics of Slice InGaN/GaN Light Emitting Diodes by Focused Ion Beam Milling” Electrochem. Solid-State Lett. 14, H343 (2011)
 2011 51. Shi, Jin-Wei, Kuo, F. -M., Huang, H. -W., Sheu, Jinn-Kong, Yang, Chih-Ciao, Lai, Wei-Chih, Lee, Ming-Lung,” The Influence of a Piezoelectric Field on the Dynamic Performance of GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer”, IEEE Electron Device Letter,  Vol. 32   Issue: 5   Pages: 656-658(2011)
 2011 50. Shi, Jin-Wei; Huang, H-W ; Kuo, F-M ; Lai, W-C ; Lee, Ming-Lun, and Jinn-Kong Sheu,” Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical-Optical Pump-Probe Technique”, IEEE Transactions on Electron Devices,  Vol.58, No.2, PP.495-500 (2011)
 2010 L.J. Yan, J. K. Sheu, F. W. Huang and M. L. Lee,Polarized edge emission from GaN-based light-emitting diodes sandwiched by dielectric/metal hybrid reflectors,JJournal of Applied Physics, vol.108 ,no.11 ,pp113102-1~113102-5,2010
 2010 Shu-Yen Liu, J. K. Sheu, Jhao-Cheng Ye, S.J.Tu, Che-Kang Hsu, M. L. Lee, C. H. Kuo and W.C. Lai,Characterization of n-GaN with Naturally Textured Surface for Photoelectrochemical Hydrogen Generation,Journal of The Electrochemical Society, vol.157 ,no.12 ,H1106-H1109,2010
 2010 Jinn-Kong Sheu, Kuo-Hua Chang, Shang-Ju Tu, Ming-Lun Lee, Chih-Ciao Yang, Che-Kang Hsu, and Wei-Chih Lai,InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO2 patterned GaN film,Optics Express, vol.18 ,no.s4 ,A562–A567,2010
 2010 Ming-Lun. Lee, T. S. Mue, J. K. Sheu, K.H. Chang, S. J. Tu, and T. H. Hsueh,Effect of Thermal Annealing on the GaN Metal-Oxide-Semiconductor Capacitors with Gallium Oxide Gate Layer,Journal of The Electrochemical Society, vol.157 ,no.11 ,H1019-H1022,2010
 2010 C. C. Yang, J. K. Sheu, Xin-Wei. Liang, Min-Shun. Huang, M. L. Lee, K. H. Chang, S. J. Tu, Feng-Wen. Huang, and W. C. Lai,Enhancement of The Conversion Efficiency of GaN-Based Photovoltaic Devices with AlGaN/InGaN Absorption Layers,Applied Physics Letters, vol.97 ,no.2 ,021113-1~021113-3,2010
 2010 Shi, Jin-Wei, Huang, H. -W., Kuo, F. -M., Sheu, J. K., Lai, W. -C., Lee, M. L.,Very-High Temperature (200 degrees C) and High-Speed Operation of Cascade GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer,IEEE Photonics Technology Letters, vol.22 ,no.14 ,pp1033-1035,2010
 2010 Kuo-Hua Chang, Jinn-Kong Sheu, Ming-Lun Lee, Shang-Ju Tu, Chih-Ciao Yang, Huan-Shao Kuo, J. H. Yang , Wei-Chih Lai,Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy,APPLIED PHYSICS LETTERS, vol.97 ,no.013502 ,013502-1~013502-3,2010
 2010 Chung-Hsun Jang, Jinn-Kong Sheu, C. M. Tsai, Shoou-jinn Chang, Wei-Chih Lai, Ming-Lun Lee, T. K. Ko, C. F. Shen, and S.C.Shei,Improved Performance of GaN-Based Blue LEDs with the InGaN Insertion Layer Between the MQW Active Layer and the n-GaN Cladding Layer,IEEE Journal of Quantum Electronics, vol.46 ,no.4 ,pp513-517,2010
 2010 S. H. Tu, C. J. Lan, S.H. Wang, M. L. Lee*, K.H.Chang, R. M. Lin, J. Y. Chang and J. K. Sheu,InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer,APPLIED PHYSICS LETTERS, vol.96 ,no.133504 ,133504-1~133504-3,2010
 2010 Liang-Jyi Yan, Chih-Chiao Yang, Ming-Lun Lee, Shang-Ju Tu ,Chih-Sung Chang and Jinn-Kong Sheu,AlGaInP/GaP Heterostructures Bonded with Si Substrate to Serve as Solar Cells and Light Emitting Diodes,Journal of the Electrochemical Society, vol.157 ,no.4 ,H452-H454,2010
 2009 Shu-Yen Liu, J. K. Sheu, Chun-Kai Tseng, Jhao-Cheng Ye, K.H. Chang, M. L. Lee and W.C. Lai,Improved hydrogen gas generation rate of n-GaN photoelectrode with SiO2 protection layer on the Ohmic contacts from the electrolyte,Journal of the Electrochemical Society, vol.157 ,no.2 ,B266-B268,2009
 2009 C. M. Tsai, J. K. Sheu, W.C. Lai , M. L. Lee, S. J. Chang , C. S. Chang, T. K. Ko and C. F. Shen,GaN-based LEDs output power improved by textured GaN/sapphire interface using in-situ SiH4 treatment process during epitaxial growth,IEEE Journal of Selected topics in Quantum Electronics, vol.15 ,no.4 ,pp1275-1280,2009
 2009 J. K. Sheu, K.H. Chang, M. L. Lee, J. F. Huang, K. S. Kang, W. L. Wang, W. C. Lai and T. H. Hsueh,Characterization of gallium-doped zinc oxide contact on n-type gallium nitride epitaxial layers,Journal of the Electrochemical Society, vol.156 ,no.8 ,H679-H683,209
 2009 Jin-Kong Sheu, Chih-Ciao Yang, Shang-Ju Tu, Kuo-Hua Chang, Ming-Lun Lee , Wei-Chih Lai, Li-Chi Peng,Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers,IEEE Electron Device Letter, vol.30 ,no.3 ,pp225-227,2009
 2009 M. L. Lee*, Ping-Feng Chi and J. K. Sheu,Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio,Applied Physics Letters, vol.94 ,no.1 ,pp013512-1~013512-3,2009
 2008 33.J. K. Sheu, K. H. Chang and M. L. Lee,Ultraviolet band-pass photodetectors formed by Ga-doped ZnO contacts to GaN ,Applied Physics Letters ,vol.11 ,no.92 ,pp.113512-1~113512-3 ,2008
 2008 M. L. Lee, J. K. Sheu and Yung-Ru Shu,32. Ultraviolet bandpass Al0.17Ga0.83N/GaN heterojunction phototransistors with high optical gain and high rejection ratio ,Applied Physics Letters ,vol.5 ,no.92 ,pp.053506-1~.053506-3 ,2008
 2008 J. K. Sheu, K. H. Chang , M. L. Lee,Ultraviolet band-pass photodetectors formed by Ga-doped ZnO contacts to GaN,Applied Physics Letters, vol.92 ,no.11 ,pp113512-1~113512-3,2008
 2008 J. K. Sheu, M. L. Lee, Y. S. Lu, and K. W. Shu,Ga-Doped ZnO Transparent Conductive Oxide Films Applied to GaN-Based Light-Emitting Diodes for Improving Light Extraction Efficiency,IEEE Journal of Quantum Electronics, vol.12 ,no.44 ,pp.1211-1218,2008
 2008 J. K. Sheu, I. Hsiu Hung, W. C. Lai, S. C. Shei and M. L. Lee,Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads,Applied Physics Letters, vol.10 ,no.93 ,103507-1~103507-3,2008
 2008 M. L. Lee, J. K. Sheu, Yung-Ru Shu,Ultraviolet bandpass Al0.17Ga0.83N/GaN heterojunction phototransistors with high optical gain and high rejection ratio,Applied Physics Letters, vol.92 ,no.5 ,pp053506-1~.053506-3,2008
 2007 M. L. Lee, J. K. Sheu, and C. C Hu,Nonalloyed Cr-Au-based Ohmic contacts to n-GaN ,Applied Physics Letters ,vol.18 ,no.91 ,pp.182106-1~182106-3 ,2007
 2007  29. J. K. Sheu, K. W. Shu, M. L. Lee, C. J. Tun and G. C. Chi,Effect of Thermal Annealing on Ga-doped ZnO Films Prepared by Magnetron Sputtering ,Journal of The Electrochemical Society ,vol.154 ,no.6 ,pp.H521-H524 ,2007
 2007 30. J. K. Sheu, Y. S. Lu, M. L. Lee, Wei-Chih Lai, C. H. Kuo and Chun-Ju Tun,Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer ,Applied Physics Letters ,vol.90 ,no.26 ,pp.263511-1~263511-3 ,2007
 2007  28.M. L. Lee and J. K. Sheu,GaN-based Ultraviolet p-i-n Photodiodes with Buried p-layer Structure Grown by MOVPE ,Journal of the Electrochemical Society ,vol.154 ,no.3 ,pp.H182~H184 ,2007
 2006  27. M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Tun, and G. C. Chi,Improved Performance of Planar GaN-based p-i-n Photodetectors with Mg-implanted Isolation Ring ,Applied Physics Letters ,vol.89 ,no.18 ,pp.183509-1-183509-3 ,2006
 2006  26. Ko TK, Chang SJ, Sheu JK, Shei SC, Chiou YZ, Lee ML, Shen CF, Chang SP, Lin KW,AlGaN/GaN Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN cap layers ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY ,vol.21 ,no.8 ,pp.1064-1068 ,2006
 2006  24. M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, C. J. Tun, and G. C. Chi,Planar ultra-violet photodetectors formed by Si implantation into p-GaN ,Journal of the Electrochemical Society ,vol.193 ,no.9 ,pp.799-801 ,2006
 2006  25. M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, and G. C. Chi, 2006,Planar GaN p-i-n photodiodes with n+-conductive channel formed by Si implantation ,Applied Physics Letters ,vol.88 ,pp.203508-1-203508-3 ,2006
 2006  23. Shih-Chang Shei , Chi-Ming Tsai, Jinn-Kong Sheu,Wei-Chi Lai , Ming-Lun Lee, and Cheng-Huang Kuo,Emission Mechanism of Mixed-color InGaN/GaNMulti-quantum Well Light-emitting Diodes ,Jpn. J. Applied Physics ,vol.145 ,no.4A ,pp.2463-2466 ,2006
 2006  22. J. K. Sheu, C. M. Tsai, M. L. Lee, S. C .Shei and W. C. Lai,InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface ,Applied Physics Letters ,vol.88 ,pp.113505-1-113505-3 ,2006
 2006  21. C. J. Tun, J. K. Sheu, M. L. Lee, C. C. Hu, C. K. Hsieh and G. C. Chi ,Journal of the Electrochemical Society. ,vol.153 ,no.4 ,pp.296-298 ,2006
 2006 18. Chun-Ju Tun , Jinn-Kong Sheu, Bao-Jen Pong, Min-Lum Lee, Ming-Yu Lee, Cheng-Kang Hsieh, Ching-Chung Hu, and Gou-Chung Chi,Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer ,IEEE. Photon. Technol. Lett. ,vol.18 ,no.1 ,pp.274-276 ,2006
 2006 19.J. K. Sheu, M. L. Lee, C. J. Tun, S.W. Lin,Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN ,Appl. Phys. Lett. ,vol.88 ,pp.043506-1-043506-3 ,2006
 2006  20.M. L. Lee, J. K. Sheu, and S. W. Lin,Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer ,Applied Physics Letters ,vol.88 ,pp.032103-1-032103-3 ,2006
 2005 15.J. K. Sheu, S. S. Chen, M. L. Lee, W. C. Lai, W. H. Chang, and G. C. Chi,Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metal-organic vapor-phase ,Journal of the Electrochemical Society ,vol.152 ,no.11 ,pp.813-815 ,2005
 2005 17. C. J. Kao, M. C. Chen, C.J. Tun, G. C. Chi, J. K. Sheu, W. C. Lai, M. L. Lee, F.Ren and S.J.Pearton,Comparison of Low Temperature GaN/SiO2/Si3N4 as gate insulators on AlGaN/GaN Heterostructure Field Effect Transistors ,Journal of Applied Physics ,vol.198 ,pp.064506-1-064506-3 ,2005
 2005 14. J. K. Sheu, M. L. Lee, H. C. Tseng, W. C. Lai, and G. C. Chi,Rectifying characteristics of WSi0.8--GaN Schottky barrier diodes with a GaN cap layer grown at low temperature ,Journal of Applied Physics. ,vol.86 ,pp.036106- ,2005
 2005 13. J. K. Sheu, M. L. Lee, and W. C. Lai, 2005,”Aluminum gallium nitride ultraviolet p-i-n photodiodes with buried p-layer structure,Aluminum gallium nitride ultraviolet photodiodes with buried p-layer structure ,Appl. Phys. Lett. ,vol.87 ,pp.043501-1-043501-3 ,2005
 2005 16. T. K. Ko, S. J. Chang, Y. K. Su, M. L. Lee, C. S. Chang, Y. C. Lin, S. C. Shei, J. K. Sheu, W. S. Chen, and C. F. Shen,AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers ,Journal of Crystal growth ,vol.283 ,pp.68-71 ,2005
 2004 10. M. L. Lee, J. K. Sheu, Y. K. Su, S. J. Chang,W. C. Lai, and G. C. Chi,Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer ,IEEE Electron Device Letters ,vol.25 ,pp.593-595 ,2004
 2004 11. C. J. Kao, J. K. Sheu, W. C. Lai , M. L. Lee, M. C. Chen and G. C. Chi,Effect of low-temperature-grown GaN cap layer on electrical properties of Al0.25Ga0.75N/GaN heterojunction field-effect transistors ,Appl. Phys. Lett. ,vol.85 ,pp.1430-1432 ,2004
 2004 12. J. K. Sheu, M. L. Lee, and W. C. Lai,Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes ,Appl. Phys. Lett. ,vol.86 ,pp.052103-1-052103-3 ,2004
 2003 J. K. Sheu, C. J. Kao, M. L. Lee, W. C. Lai, L. S. Yeh, G. C. Chi, S. J. Chang, Y. K. Su and J. M. Tsai,Low-dark current, high-sensitivity metal-semiconductor-metal ultraviolet photodetectors based on GaN with low-temperature GaN intermediate layer ,Journal Electronic Materials ,vol.32 ,pp.400-402 ,2003
 2003 9. M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen,C. J. Kao, J. M. Tsai and G. C. Chi,Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer ,Journal Appl. Phys. ,vol.94 ,pp.1753-1757 ,2003
 2003 X. D. Chen, Y. Huang, S. Fung, C. D. Beling, C. C. Ling, J. K. Sheu, M. L. Lee,,Deep level defect in Si-implanted GaN n+-p junction ,Applied Physics Letters ,vol.82 ,pp.3671-3673 ,2003
 2003 S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi, and J. M. Tsai,GaN Metal–Semiconductor–Metal Photodetectors With Low-Temperature-GaN Cap Layers and ITO Metal Contacts ,IEEE Electron Device Letters ,vol.24 ,pp.212-214 ,2003
 2003 8. M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen,C. J. Kao, J. M. Tsai and G. C. Chi,GaN Schottky barrier photodetectors with a low-temperature GaN cap layer ,Applied Physics Letters ,vol.82 ,no.17 ,pp.2913-2915 ,2003
 2003 L. S. Yeh, M. L. Lee, J. K. Sheu, M. G. Chen , C. J. Kao, G. C. Chi, S. J. Chang and Y. K. Su,Visible–blind GaN p–i–n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure ,solid-state Electronics ,no.47 ,pp.873-878 ,2003
 2002 J. K. Sheu, M. L. Lee, L. S. Yeh, C. J. Kao, C. J. Tun, , M. J. Chen, G. C. Chi, S. J. Chang , Y. K. Su and C. T. Lee,Planar GaN n+-p photodetectors formed by Si implants into p-GaN ,Applied Physics Letters ,vol.81 ,no.22 ,pp.4263-4265 ,2002
 2002 J. K. Sheu, M. L. Lee , C. J. Tun, C. J. Kao, L. S. Yeh, C. C. Lee, and G. C. Chi,Characterization of Si implants in p-type GaN ,IEEE J. Selected topics in Quantum Electronics ,vol.18 ,no.4 ,pp.767-772 ,2002
 2002 M. L. Lee, J. K. Sheu, L. S. Yeh, M. S. Tsai, C. J. Kao, C. J. Tun, S. J. Chang and G. C. Chi,GaN p-n junction diode formed by Si ion implantation into p-GaN ,solid-state electronics ,vol.46 ,no.12 ,pp.2179-2183 ,2002

研討會論文
2012 J.-W. Shi, F.-M. Kuo, Che-Wei Lin, Wei Chen, M.L.Lee, L.-J. Yan, and J.-K. Sheu, “ Efficiency-Droop Mechanism in Vertical Red Light-Emitting Diodes Using Electrical-to-Optical Impulse Responses” SPIE Photonics West, 21-26 January 2012, San Francisco, California, USA.
2011 Chih-Ciao Yang, Jinn-Kong Sheu,Yu-Jheng Yang, Meng-Ting Chiang, Meng-Chieh Yang, Chia-Hui Li, Ming-Lun Lee and Wei-Chih Lai,Mechanisms of Photocarrier Loss in InGaN/sapphire Photovoltaic Devices,9th International Conference on Nitride Semiconductors (ICNS-9)
2011 Shu-Yen Liu, Jhao-Cheng Ye, Yu-Chuan Lin, Meng-Chieh Yang, Ming-Lun Lee, Wei-Chih Lai and Jinn-Kong Sheu,Improved hydrogen gas generation rate by immersed finger-type indium tin oxide ohmic contacts on n-GaN photoelectrode,9th International Conference on Nitride Semiconductors (ICNS-9)
2011 Chih-Ciao Yang, Jinn-Kong Sheu, Min-Shun Huang, Shang-Ju Tu, Feng-Wen Huang, Kuo-Hua Chang, Ming-Lun Lee and Wei-Chih Lai,Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers,SPIE Photonice West 2011
2011 Shu-Yen Liu, Jhao-Cheng Ye, Yu-Chuan Lin, Kuo-Hua Chang, Ming-Lun Lee, Wei-Chih Lai, and Jinn-Kong Sheu,Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts,SPIE Photonice West 2011
2010 Shu-Yen Liu , Yu-Chuan Lin, Chih-Ciao Yang, Ming-Lun Lee, Wei-Chih Lai, Jinn-Kong Sheu,Hydrogen generation from water splitting with GaN-based solar cells,2010 International Conference on Optics and Photonics in Taiwan(OPT'10)
2010 Feng-Wen Huang, Yu-Hsuan Liu, Ming-Lun Lee, J. H. Yang, W. C. Lai and Jinn-Kong Sheu,Characteristics of GaN p-i-n photodetectors with Mn-doped absorption layer,2010 International Conference on Optics and Photonics in Taiwan(OPT'10)
2010 Ming-Lun Lee, Yu-Hsiang Yeh and Chung-Han Yang,GaN-Based Characterization of p-i-n ultraviolet photodetectors with Cr/Al or Cr/Au metal electrodes,2010 International Conference on Optics and Photonics in Taiwan(OPT'10)
2010 Che-Kang. Hsu, Jinn-Kong. Sheu, Jia-Kuen.Wang, M. L. Lee, K. H. Chang, S. J. Tu and W. C. Lai,Characteristics of
2009 Shu-Yen Liu, Chun-Kai Tseng, Jhao-Cheng Ye, K-H Chang, M. L. Lee, W.C.Lai and J.K. Sheu,Direct hydrogen gas generation by n-GaN photoelectrode with SiO2 protection layer on the Ohmic contact from the electrolyte,8th International Conference on Nitride Semiconductors
2009 Kuo-Hua Chang, Jinn-Kong Sheu, Ming-Lun Lee, Tao-Hung Hsueh, Chih-Ciao Yang, Kai-Shun Kang, Jing-Fong Huang, Li-Chi Peng, and Wei-Chih Lai,GZO/GaN Schottky barrier ultraviolet band-pass photodetector with a low-temperature-grown GaN cap layer,International conference on Solid-state Devices and Materials
2009 Chih-Ciao Yang, Jinn-Kong Sheu, Shang-Ju Tu, Chun-Kai Tseng, Min-Shun Huang,Kuo-Hua Chang, Tao-Hung Hsueh, Ming-Lun Lee, Li-Chi Peng, and Wei-Chih Lai,,Enhanced Photovoltaic Effects of InGaN-based Materials for Future Full-Solar-Spectrum Solar Cells,International conference on Solid-state Devices and Materials
2008 15. Jinn-Kong Sheu, Chih-Ciao Yang, Wei-Chih Lai, Kuo-Hua Chang, Li-Chi Peng, M. L. Lee and S.J. Tu,Design and Characterization of GaN-based Solar Cells with GaN/InGaN Superlattice Absorption Layers,OPT 2008
2005 6. M. L. Lee, H. H. Chen, J. K. Sheu, and W. C. Lai,"GaN-based Ultraviolet p-i-n Photodiodes with Buried tunneling junction","OPT"
2004 4. M. L. Lee, J. K. Sheu, Y. K. Su, S. J. Chang, W. C. Lai, and G. C. Chi,"Characterization of GaN Schottky barrier photodiodes with a low-temperature growth GaN cap layer","Electrochemical Society Proc."
2004 5. M. C. Chen, J.K. Sheu, M. L. Lee, G.C. Chi, C.J. Gao, and C.J. Tun,"Planar GaN-based UV Photodetectors formed by Si Implantation","Electrochemical Society Proc."
2004 3. T. C. WEN, J. K. Sheu, W. C. Lai, J. M. Tsai, Y. P. Shu, C. H. Ko, L. W. Wu, M. L. Lee, P. T. Wang, C. S. Chang, S. J. Chang and Y. K. Su","Monolithic InGaN/GaN light-emitting diodes with near white-light emission from crossed blue/green quantum well structure","International conference of MOVPE"
2003 1. G. C. Chi, J.K. Sheu, M. L. Lee, C.J. Kao, Y.K. Su, S.J. Chang,and W.C. Lai","Reduction of Dark Current in AlGaN/GaN Schottky Barrier Photodetectors With a Low-Temperature-Grown GaN Cap Layer","Matr. Res. Soc. Symp. Proc."
2003 2. M. L. Lee, J. K. Sheu, C. J. Kao, M. C. Chen, C. J. Tun, W. C. Lai, Y. K. Su, S.J. Chang, and G. C. Chi","GaN Schottky barrier photodetectors with a low-temperature GaN cap layer","Electronic Devices and Material Symp."

產學合作
2010 抗紫外線防曬紡織產品之特性檢驗

國科會計劃
2011  在不同基板成長非極性氮化鎵光電元件研究-子計畫五:高極化敏感度及高效率之氮化鎵系列紫外光偵測器的研製與其特性分析
 2010  在不同基板成長非極性氮化鎵光電元件研究-子計畫五:高極化敏感度及高效率之氮化鎵系列紫外光偵測器的研製與其特性分析
 2009  在不同基板成長非極性氮化鎵光電元件研究-子計畫五:高極化敏感度及高效率之氮化鎵系列紫外光偵測器的研製與其特性分析
 2008  具有高響應度之氮化鎵光電晶體紫外光偵測器之研究
 2007  高速紫外光偵測器之研究
 2006  高效率之深紫外光氮化鎵光檢測器的研製
 2005  具有Solar-Blind偵測波段之氮化鎵PIN 紫外光檢測器的研製

指導碩士班論文
2010 選擇性成長方法應用於倒置型p-i-n偵測器成長在p-GaN之研究、葉育翔
2009 鉻/鋁雙層金屬於n型氮化鎵之歐姆接觸研究、楊宗翰
2008 透明導電膜沉積於矽基板之異質接面太陽能電池研究 、杜尚儒
2008 氮化鎵系列紫外光偵測器之製作與分析、紀秉夆
2007 鎳掺雜於氧化銦錫薄膜分析及其應用於氮化鎵蕭機能障二極體之研究、陳興豪-M94L0215
2007 以熱蒸鍍方式製備金奈米粒子之研究、李慈泰-M94L0101

大學部專題
2011 利用側壁蝕刻方法增加氮化鎵系列藍光發光二極體光輸出功率之研究、林璟良(497L0025)陳俊源(497L0049)
 2010 以化學水浴法成長氧化鋅奈米柱、吳明叡(496L0037)簡嘉良(496L0095)






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