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陳美利

姓    名 陳 美利 職    稱 副教授
校 內 分 機   ( 06 )-2533131 # 3634
E - mail   cmli@stust.edu.tw
最 高 學 歷   南台科大 / 電子博士
研 究 領 域   近代物理、IC元件

經歷
服務機關
職稱
起迄年月
南榮工專(南榮技術學院)
共同科講師
1986/2–1986/7
南台工專(南台科技大學)
共同(通識中心)講師
1986/8-2007/12
南台科技大學
通識中心副教授
2008/1 – 2008/7
南台科技大學
光電系副教授
2008/8 – 迄今

獲獎榮譽
2009 / 11 / 25 指導學生參加98燃料電池/太陽能車競賽 佳作
2009 / 12 / 01 校外賃居訪績優導師(98上)
2010 / 02 / 12 績優導師 (98 學年度第一學
2010 / 03 / 10 服務學習績優教師(98學年度第一學
2010 / 06 / 23 校外賃居訪視 績優導師(98下)
2010 / 09 / 16 98 學年度第二學期績優導師
2011 / 01 / 13 校外賃居訪視績優導師(99上)
2011 / 01 / 31 績優導師(99學年度第一學期)
2011 / 07 / 27 績優導師(99學年度第二學期)
2011 / 09 / 07 校外賃居訪視績優導師(99下)
2012 / 01 / 11 住宿生訪視績優導師(100上)
2012 / 02 / 01 賃居生訪視績優導師(100上)
2012 / 02 / 01 績優導師(100學年度第一學期)

期刊論文
2011 Chun-Rong Lin*, I-Han Chen , Cheng-Chien Wang , Mei-Li Chen, “Synthesis and characterization of magnetic hollow nanocomposite spheres”, Acta Materialia, vol.59, no.17, pp.6710–6716,. (SCI)
2010 Mei-Li Chen*, “Analytical Subthreshold Behavior Model for Symmetrical Tri-Material Gate Stack Double-Gate MOSFETs” Journal of Southern Taiwan University, vol.35, no.1, pp.39-50,.
2009 Mei-Li Chen, Wen-Kai Lin, and Shih-Fang Chen,A New Two-Dimensional Analytical Model for Nanoscale Symmetrical Tri-Material Gate Stack Double Gate Metal-Oxide-Semiconductor Field Effect Transistors,Japanese Journal of Applied Physicsvol.48,no.10,pp104503-1-104503-7,
2007 T. K. Chiang and M. L. Chen, “A new analytical threshold voltage model for symmetrical double-gate MOSFETs with high-k gate dielectrics, Solid-State Electronics, vol. 51, no. 3, pp.387-393, . (SCI)
2007 T. K. Chiang and M. L. Chen, “A new two-dimensional analytical model for short-channel symmetrical dual-material double-gate metal-oxide-semiconductor field effect transistors, Japanese Journal of Applied Physics, vol. 46, no. 6A, pp.3283-3290,. (SCI)

研討會論文
2011 Mei-Li Chen*, Chun-Chieh Fang, and Chun-Rong Lin, “Synthesis of Mn-doped zinc blende ZnSe nanocrystals"International Symposium on Nano Science and Technology (ISNST), pp. 96-97, Nov., 2011.
2010 Mei-Li Chen*, Shang-Che Chung, Geng-Wei Lin, and Hung-Chang Lin,A Two-Dimensional Analytical Model for Nano Single Halo Dual-Material Double Gate MOSFET,2010 International Conference on Optics and Photonics in Taiwan(OPT'10)
2010 Mei-Li Chen*, Shang-Che Chung, Geng-Wei Lin, and Hung-Chang Lin, 2010 “A Two-Dimensional Analytical Model for Nano Single Halo Dual-Material Double Gate MOSFET” , International Conference on Opticals and Photonics in Tawian , OPT1-P-123, P.141, December 03-04, Tainan, Taiwan.
2009 M. L. Chen*,W. K. Lin,and S. F. Chen, “A Two-Dimensional Analytical Threshold Voltage Model for Symmetrical Tri-Material Gate Stack Double Gate (STMGSDG) MOSFET,s”, International Electron Devices and Materials Symposium, Taoyuan, Taiwan. (2009).
2008 M. L. Chen and T. K. Chiang,Analytical Modeling of Quantization and Volume Inversion for Nanoscale Surrounding-Gate MOSFETS,International Symposium on Nano Science and Technology
2008 M. L. Chen* and T. K. Chiang, “Analytical Modeling of Quantization and Volume Inversion for Nanoscale Surrounding- Gate MOSFETs"International Symposium on Nano Science and Technology (ISNST), pp. 204-205, Nov., 2008.
2007 T. K. Chiang, M. L. Chen and H. K. Wang , “A New Two-dimensional Model for Dual Material Surrounding-Gate (DMSG) MOSFET’s", IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), pp. 597-600, Dec., 2007.
2007 6. T. K. Chiang and M. L. Chen, “A Three-Dimensional Analytical Model for subthreshold behavior in fully-depleted SOI FinFET”, International Symposium on Nano Science and Technology (ISNST), pp. 282-283, Nov., 2007.
2007 T. K. Chiang and M. L. Chen, “Quantum Mechanical Threshold Voltage Model for Short-Channel Symmetrical Double-Gate Nanoscale MOSFETs", International Symposium on Nano Science and Technology (ISNST), pp. 280-281, Nov., 2007
2007 8. T. K. Chiang, Y. K. Shiau and M. L. Chen, “A New Two-Dimensional Analytical Model for Fully Depleted Dual Material Gate SOI MOSFET’s", International Symposium on Nano Science and Technology (ISNST), pp. 293-294, Nov., 2007
2006 9. T. K. Chiang and M. L. Chen, “A New Analytical Two-Dimensional Threshold Voltage Model for Symmetrical Dual-Material Double-Gate MOSFETs", International Electron Devices and Materials Symposia (IEDMS), pp. 397-398, Dec., 2006.
2006 T. K. Chiang and M. L. Chen, “A New Two-Dimensional Analytical Model for Threshold Voltage in DG MOSFETs with High-K Gate ", International Symposium on Nano Science and Technology (ISNST), pp. 288-289, Nov., 2006.
2005 T. K. Chiang and M. L. Chen, “A New Two-Dimensional Analytical Model for Threshold Voltage in DG MOSFETs", International Symposium on Nano Science and Technology (ISNST), pp. 201-202, Nov., 2005.
2004 12. T. K. Chiang and M. L. Chen, “A compact, continuous analytic I-V model for surrounding-gate MOSFETs", IEEE International Conference on Solid-State and Integrated-Circuits Technology (ICSICT), pp.1196--1200, Oct., 2004.

產學合作
2011 光譜分析在量測系統上之應用研究
2010 光學在精密量測系統上之應用研究
2009 IC製程應用於光學尺製作

國科會計劃
2009 化學氣相沈積系統的液態蒸氣源開發:奈米碳管製程研究
2009 以多壁奈米碳管為基礎的光伏特性研究
2008 高效能的染料敏化太陽電池的對極電極開發(III)
2008 高效能的染料敏化太陽電池的對極電極開發(II)
2006 高效能的染料敏化太陽電池的對極電極開發
2005 無真空腔之液晶注入技術開發:抽氣流道對液晶流動與光電特性之影響研究
2004 金屬觸媒微粒應用於碳管合成最佳化研究(II)
2003 金屬觸媒微粒應用於奈米碳管合成之最佳化研究(I)

指導碩士班論文
2009 對稱型参材質雙閘極金氧半場效電晶體次臨界行為研究

大學部專題
2011 ZnSe奈米粒子的製備
2010 有關對稱型雙閘極金氧半場效電晶體掺雜濃度改變之特性探討


個人著作一覽表
Journal pape

1.         Chien-Min Cheng,Kai-Huang Chen,Fuh-Cheng Jong, Mei-Li Chen*,Hsuan-Hung Li, Han-Chin Chen, and Po-Yu Hsieh, “Resistive Switching Properties in Samarium Oxide Resistance Random Access Memories”,Sensors and Materials,vol. 30,no.3,pp.471478,2018.(SCI)

 

2.         Chien-Min Cheng, Kai-Huang Chen, Da-Huei Lee, Fuh-Cheng Jong, Mei-Li Chen*, and Jhih-Kai Chang, “Dielectric, Piezoelectric, and Vibration Properties of the LiF-Doped (Ba0.95Ca0.05)(Ti0.93Sn0.07)O3 Lead-Free Piezoceramic Sheets”,Materials,vol. 11,no.2,pp.182 ,2018.(SCI)

3.         Ching-Hsing Pei, Mei-Li Chen, Kai-Huang Chen, and Chien-Min Cheng*, “Performance Improvement of LiF/ZnO Codoped Lead-FreePiezoelectric Ceramics”,Sensors and Materials,vol.29,no. 4,pp.411418 ,2017.(SCI)

4.         Chien-Min Cheng, Ching-Hsing Pei, Mei-Li Chen*, Kai-Huang Chen, “The inferences of ZnO additions for LKNNT lead- free piezoelectric ceramics”, Integrated Ferroelectrics,vol. 168, issue 1, pp. 61-68,2016.(SCI) 

5.         Chien-Min Cheng, Ching-Hsing Pei, Mei-Li Chen*,Kai-Huang Chen, “Characteristics improvement of Li0.058(K0.480Na0.535)0.966(Nb0.9Ta0.1)O3lead-free piezoelectric ceramics by LiF additions”,Integrated Ferroelectrics,vol. 168, issue 1, pp. 53-60,2016.(SCI)

6.         Mei-Li Chen, Chung-Chun Wu, Sheng-Chang Wang*,Shih-Kai Hsu, “One-dimensional Copper Sulfide Nanowires Growth by Hydrothermal Synthesis Assisted with Porous Anodized Alumina Membrane Template”, 南臺學報工程科學類第1 卷第1 2016 3 pp.112

7.         Lyubutin, I. S. *, Chun-Rong Lin*, Funtov, K. O., Dmitrieva, T. V., Starchikov, S. S., Yu-JhanSiao, and Mei-Li Chen, “Structural, magnetic, and electronic properties of iron selenide Fe6-7Se8 nanoparticles obtained by thermal decomposition in high-temperature organic solvents”, Journal of Chemical Physics, vol.141, no.4, pp.111,2014.(SCI) 

8.         Chun-Rong Lin*, I-Han Chen , Cheng-Chien Wang , Mei-Li Chen, “Synthesis and characterization of magnetic hollownanocompositespheres”,ActaMaterialia, vol.59, no.17, pp.67106716,2011.(SCI)

9.         Mei-Li Chen*, “Analytical Subthreshold Behavior Model forSymmetrical Tri-Material Gate StackDouble-Gate MOSFETs”Journalof Southern Taiwan University, vol.35,no.1, pp.39-50, 2010.

10.     Mei-Li Chen*, Wen-Kai Lin, Shih-Fang Chen, “A New Two-Dimensional Analytical Model for Nanoscale SymmetricalTri-Material Gate Stack Double Gate (STMGSDG) Metal-Oxide-SemiconductorField Effect Transistors (MOSFETs)”, Japanese Journal of Applied Physicsvol.48no.10 (2009). (SCI)

11.     T. K. Chiang and M. L. Chen, “A new analytical threshold voltage model for symmetrical double-gate MOSFETs with high-k gate dielectrics, Solid-State Electronics, vol. 51, no. 3, pp.387-393, 2007. (SCI)

12.     T. K. Chiang and M. L. Chen, “A new two-dimensional analytical model for short-channel symmetrical dual-material double-gate metal-oxide-semiconductor field effect transistors, Japanese Journal of Applied Physics, vol. 46, no. 6A, pp.3283-3290, 2007. (SCI)